VAL K4-212 Module (1st detector on top side bonded)

Module Description
The module is in the following construction step:

Assembled and fanins glued.
Top side: Chips to Fanin bonded, and Fanin to 1st detector (W31) bonded.
Bottom side: Only Chips to Fanin bonded.

Setup

Kapton4 Forward Hybrid (K4-212) populated with 12 ABCD3T.
SEQUENCER - DRAFT readout.
FWDKEL + SC2001.

No optical readout is used, we use the electrical lines.

Parameters

Vdet = 150 V.
Vdd = 4.00 V (on hybrid).
Vcc = 3.50 V (on hybrid).
Edge detection circuitry disabled.
Compression mode Level (X1X).
Bias Current = 220uA.
Shaper Current = 31.2uA.
Hybrid Temperature = 50慢.

Noise Scan
A trimming was done at Qin=0.0fC (Noise Scan), using the 60mV range. The Threshold value that minimizes the spread was 52.5 mV. Using this trimming, a Noise Scan was done and instability was observed.

Common Mode
Using the trimming at 0fC and setting the threshold at 0fC, 20.000 events were analyzed. Multiplicity.eps shows the number of hits per event (over 1) and the spread of this distribution, for both, top and bottom planes. The calculated Gamma gives 38% of Common Mode on top plane and 9% of Common Mode on bottom plane.

Plotting the Correlation Matrix (Correlation.jpg) one can observe a very low correlation (0.002) for channels of different chip (if both chips are not on the top plane), a bit more (0.031) for channels within the same chip on the bottom plane. For channels on the top plane the correlation is bigger (0.09) (correlaciones.ps). Among the channels of this last group, channels at the border of the chips have bigger correlation to the others.

Trimming
The trimming was done at Qin=1.0fC, using the 60mV range. The Threshold value that minimizes the spread at 1.0fC is 92.5 mV.

Bad channels

Dead channels: 1189.
Hot channels: 565.
Noisy channels: 555, 556, 589.
No trimmed channels: 669, 713, 1070.

Calibration

Chip M0 S1 S2 S3 S4 E5 Front
Gain(mV/fC) 51.9 53.3 53.3 53.9 54.8 52.6 53.3
ENC(@2fC)(e-) 1175 1163 1203 1250 1085 1162 1173
Chip M8 S9 S10 S11 S12 E13 Back
Gain(mV/fC) 50.7 46.8 50.6 52.0 51.1 50.4 50.3
ENC(@2fC)(e-) 868 706 709 653 742 696 729

Plots:

The observed excess noise on the bottom plane respect to the hybrid measurement could be due to the bonding to the fanins, incrementing the interchannel capacity.

Chip	M0	S1	S2	S3	S4	E5	Front
Gain(mV/fC)	51.9	53.3	53.3	53.9	54.8	52.6	53.3
ENC(@2fC)(e-)	1175	1163	1203	1250	1085	1162	1173
Chip	M8	S9	S10	S11	S12	E13	Back
Gain(mV/fC)	50.7	46.8	50.6	52.0	51.1	50.4	50.3
ENC(@2fC)(e-)	868	706	709	653	742	696	729